Category: Local clamp

• DTSCR dual diode ESD protection ESD protection approaches FinFET Local clamp SCR Silicon controlled rectifier SOI

  ESD basic: Silicon Control Rectifier (SCR)

  

  SCR intro: Silicon-controlled rectifiers (SCRs) are interesting devices that can be used for on-chip ESD protection, if (and only if) they are properly designed and biased. SCRs are used for high-speed/RF or low-capacitance, small area/high-performance ESD solutions in all CMOS technologies, including SOI and FinFET (down to 3nm today). SCR…

  February 10, 2023
• ESD protection ESD protection approaches ggnmos Local clamp power clamp

  ggNMOS (grounded-gated NMOS)

  

  ggNMOS intro: For decades, a traditional workhorse device for ESD protection for standard applications in CMOS technology has been the grounded-gate NMOS device (ggNMOS). Nevertheless, we have been explaining the operation of this device countless times, including as recently as 3 weeks ago. So, it is time for a short…

  January 26, 2023
• CMOS DTSCR ESD devices ESD protection FinFET Local clamp Low capacitance ESD Optical communication Paper SCR SerDES SiGe BiCMOS Silicon controlled rectifier SOI TakeCharge Wired communication

  Optimized Local I/O ESD Protection for SerDes In Advanced SOI, BiCMOS and FinFET Technology

  Sofics’ 2021 IEDS publication. Semiconductor companies are developing ever faster interfaces to satisfy the need for higher data throughputs. However, the parasitic capacitance of the traditional ESD solutions limits the signal frequency. This paper demonstrates low-cap Analog I/Os for high speed SerDes (28Gbps to 112Gbps) circuits created in advanced BiCMOS,…

  August 9, 2022
• 2.5D and 3D hybrid integration 3D integration CMOS ESD design window ESD protection High voltage tolerance Imagers Local clamp Low capacitance ESD Silicon controlled rectifier Wired communication

  Selecting optimized ESD protection for CMOS image sensors

  Today, you can find CMOS image sensors almost everywhere in consumer, automotive, health and security applications. There has been a lot of innovation to enable demanding requirements. The article provides a summary about the 3 main aspects that IC designers need to consider when selecting the ESD protection clamps for…

  June 1, 2022
• Automotive CMOS Display EOS ESD design window ESD protection ESD protection approaches ESD testing High Voltage High voltage tolerance IEC 61000-4-5 Local clamp Over voltage tolerant overvoltage tolerant PowerQubic TakeCharge

  3 approaches to handle EOS ‘requirements’

  EOS, or Electrical Overstress, is any electrical stress that exceeds any of the specified absolute maximum ratings (AMR) of a product. It is important to discuss because many products are damaged this way. This article includes case studies and 3 approaches to handle those requests.

  May 27, 2022
• Automotive CMOS dual diode ESD protection ESD protection approaches Ethernet FinFET High ESD or IEC 61000-4-2 robustness High speed interfaces Local clamp Low capacitance ESD SerDES TakeCharge Wired communication

  Optimized on-chip ESD protection to enable high-speed Ethernet in cars.

  In the past most Electronic Control Units (ECU) used CAN and LIN interfaces to connect to sensors, actuators and each other. However, the newest applications need (much) faster communication options. Gigabit automotive ethernet is pushed by many in the industry as the perfect solution. With its local ESD clamp approach,…

  May 18, 2022
• dual diode ESD design window ESD devices ESD protection ESD protection approaches Local clamp Secondary protection Self-protected drivers

  Introduction: ESD protection concepts for I/Os

  There are many different approaches to ensure effective ESD protection for integrated circuits. It is important to select the right approach for each interface and power domain. This article outlines the main options for Interface protection.

  March 29, 2022
• ESD devices ESD protection ESD protection approaches FinFET Local clamp SCR SerDES Silicon controlled rectifier

  Optimized ESD protection based on Silicon Controlled Rectifiers (SCR), verified on Samsung Foundry 4nm and 8nm FinFET processes

  Engineers developing semiconductor devices in the most advanced FinFET technology need improved ESD protection solutions. We demonstrate ESD protection solutions based on proprietary Silicon Controlled Rectifiers verified on the Samsung Foundry 8nm and 4nm FinFET process.

  February 15, 2022
• ESD devices ESD protection ESD protection approaches FinFET Local clamp Low capacitance ESD SerDES Silicon controlled rectifier SOI

  Optimized Local I/O ESD Protection for SerDes In Advanced SOI, BiCMOS and FinFET Technology

  Semiconductor companies are developing ever faster interfaces to satisfy the need for higher data throughputs. However, the parasitic capacitance of the traditional ESD solutions limits the signal frequency. This paper demonstrates low-cap Analog I/Os for high speed SerDes (28Gbps to 112Gbps) circuits created in advanced BiCMOS, SOI and FinFET nodes.

  September 16, 2021