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Low parasitic capacitance

Sofics technology has been applied for many different applications. Specifically for high-speed interfaces or high-bandwidth wireless applications the parasitic capacitance of the ESD cells need to be as low as possible.

Sofics solutions typically have 30% to 50% lower capacitance compared to the foundry solutions with the same ESD robustness.

Examples for different process nodes are shown below. This is just a subset of cells proven on silicon and in mass production.
All cells can be ported to other processes. The actual numbers (ESD robustness, leakage, capacitance, area) may vary slightly, also depending on the circuit to be protected, process, voltage level.

ProcessPadESD robustnessParasitic capacitance
TSMC 180nm 1.8V I/O> 5 kV HBM< 300 fF
TSMC 180nm5V I/O> 8 kV HBM300 fF
TSMC 180nm7V I/O> 2 kV HBM< 200 fF
TowerSemi 350nm4.5V I/O> 8 kV HBM< 550 fF
ProcessPadESD robustnessParasitic capacitance
TSMC 130nm 1.2V I/O> 4 kV HBM< 100 fF
TSMC 130nm1.2 I/O OVT> 2 kV HBM< 50 fF
UMC 130nm1.2V I/O> 2 kV HBM< 150 fF
TSMC 90nm3.3V I/O> 2 kV HBM< 100 fF
TSMC 65nm1.8V I/O> 4 kV HBM< 100 fF
TSMC 65nm1.0V I/O> 3 kV HBM< 70 fF
GF 65nm1.2V I/O> 2 kV HBM< 50 fF
GF 65nm3.3V I/O> 2 kV HBM< 50 fF
ProcessPadESD robustnessParasitic capacitance
TSMC 40nm 3.3V I/O> 5 kV HBM< 180 fF
TSMC 40nm1.2V I/O> 4 kV HBM< 180 fF
TSMC 40nm1.8V I/O> 2 kV HBM< 70 fF
TSMC 28nm0.85V I/O> 2 kV HBM< 100 fF
TSMC 28nm1.0V I/O> 100 V HBM< 11 fF
TSMC 28nm1.0V I/O> 200 V HBM< 15 fF
TSMC 28nm1.5V I/O> 1 kV HBM< 60 fF
UMC 28nm1.0V I/O> 1.5 kV HBM65 fF
TSMC 22nm0.8V I/O> 8 kV HBM< 500 fF
ProcessPadESD robustnessParasitic capacitance
TSMC 16nm 1.0V I/O> 1 kV HBM< 80 fF
TSMC 16nm1.0V I/O> 2 kV HBM100 fF
TSMC 12nm1.8V I/O> 3 kV HBM300 fF
TSMC 7nm0.9V I/O> 400 V HBM50 fF
TSMC 7nm0.9V I/O> 150 V HBM15 fF
TSMC 7nm0.9V I/O> 80 V HBM10 fF
TSMC 6nm0.9V I/O> 100 V HBM13 fF
TSMC 5nm0.9V I/O> 1 kV HBM90 fF
Samsung 4nm1.2V I/O> 2 kV HBM230 fF
ProcessPadESD robustnessParasitic capacitance
GF 9HP2.5V I/O> 2 kV HBM< 50 fF
GF 9HP2.5V I/O> 200 V HBM< 10 fF
GF 9HP2.5V I/O500 V HBM< 10 fF