Artificial Intelligence (AI) Chip Design: ESD and I/O Solutions

Artificial Intelligence is redefining how chips are designed and used. Different use cases exist like deep learning and inference in data centers or inference at the edge, AI chips must move data faster, process more efficiently, and operate within strict power limits. This puts new demands on the underlying semiconductor design.

One major challenge is the communication between compute and memory. Designers push for high-speed I/O using thin-oxide transistors and low-voltage protocols. These are highly susceptible to electrostatic discharge (ESD), especially on advanced nodes like FinFET processes.

Sofics provides custom ESD and I/O IP for AI chips, silicon-proven, low-leakage, and optimized for high-performance interfaces.

Custom Requirements for AI Chip Designers

Designers of AI accelerators and SoCs face specific challenges where standard foundry IP is not sufficient:

Low-capacitance I/O
High-speed SerDes and memory interfaces (e.g. HBM, LPDDR) require ESD clamps with very low parasitic capacitance.
High ESD robustness for advanced nodes
FinFET and other advanced nodes used in data center AI chips are sensitive to ESD. Custom protection is essential to prevent failures in mass production.
High CDM peak currents
AI chips are some of the largest ICs ever manufactured. Larger dies and packages mean higher CDM currents. Localized ESD protection helps manage peak stress.
Ultra-low leakage for edge AI
Power efficiency is critical for edge AI applications. Sofics IP offers up to 100x lower leakage compared to foundry ESD cells.
Support for 2.5D and 3D ICs
AI architectures increasingly rely on die stacking to bring compute closer to memory. These interfaces demand tailored ESD protection for die-to-die connections.

Sofics IP for AI Chips

Key Focus Areas

High-speed interfaces (e.g. SerDes, optical, memory I/O)
ESD clamps with minimal parasitic loading to maintain signal integrity.
Die-to-die interfaces for 2.5D/3D stacking
Custom, small ESD solutions that protect chiplet interfaces.
Edge AI and low-power inference
Low-leakage ESD solutions enable longer battery life and reduced standby power.
High CDM robustness
Fast-responding local clamps reduce peak voltage in large FinFET dies during transient events.

Process technology covered

Mature CMOS (0.5um to 180nm)
Advanced CMOS (40nm to 22nm)
FinFET technology
BiCMOS technology

Foundries covered

TSMC
GlobalFoundries

Examples of AI IC Products Using Sofics IP

Sofics IP has been integrated in a wide range of AI applications

Ultra-low power inference chips for edge devices (e.g. voice assistants, wearables)
(2 customers)
Optical communication-enabled AI chips to increase memory bandwidth
(2 customers)
Data center accelerators designed on advanced FinFET nodes
(4 customers)

Testimonial: Graphcore Colossus

AI accelerator on TSMC 16nm FinFET
23.5B transistors – 800mm²
last minute CDM protection

Phil Horsfield, VP Silicon

“Sofics offered us flexibility with customization, a silicon proven portfolio and fast time to market. Within just a few weeks we went from first contact to contract to solution delivery.”

These are examples from many IP delivery projects. If you did not find the example you were looking for you should contact us (info@sofics.com) to discuss your application and requirements.