Category: SOI

• DTSCR dual diode ESD protection ESD protection approaches FinFET Local clamp SCR Silicon controlled rectifier SOI

  ESD basic: Silicon Control Rectifier (SCR)

  

  SCR intro: Silicon-controlled rectifiers (SCRs) are interesting devices that can be used for on-chip ESD protection, if (and only if) they are properly designed and biased. SCRs are used for high-speed/RF or low-capacitance, small area/high-performance ESD solutions in all CMOS technologies, including SOI and FinFET (down to 3nm today). SCR…

  February 10, 2023
• CMOS DTSCR ESD devices ESD protection FinFET Local clamp Low capacitance ESD Optical communication Paper SCR SerDES SiGe BiCMOS Silicon controlled rectifier SOI TakeCharge Wired communication

  Optimized Local I/O ESD Protection for SerDes In Advanced SOI, BiCMOS and FinFET Technology

  Sofics’ 2021 IEDS publication. Semiconductor companies are developing ever faster interfaces to satisfy the need for higher data throughputs. However, the parasitic capacitance of the traditional ESD solutions limits the signal frequency. This paper demonstrates low-cap Analog I/Os for high speed SerDes (28Gbps to 112Gbps) circuits created in advanced BiCMOS,…

  August 9, 2022
• ESD devices ESD protection Low leakage Silicon controlled rectifier SOI Wireless

  Optimized IP for GF’s 22nm FDX technology

  The 22nm FDX process from GlobalFoundries is a great technology for various applications including low-power IoT on the edge, high-bandwidth 5G mmWave devices and automotive products, Since its market introduction, the SOI process technology receives a lot of attention because it combines unique features in one platform. At the 2021…

  September 23, 2021
• ESD devices ESD protection ESD protection approaches FinFET Local clamp Low capacitance ESD SerDES Silicon controlled rectifier SOI

  Optimized Local I/O ESD Protection for SerDes In Advanced SOI, BiCMOS and FinFET Technology

  Semiconductor companies are developing ever faster interfaces to satisfy the need for higher data throughputs. However, the parasitic capacitance of the traditional ESD solutions limits the signal frequency. This paper demonstrates low-cap Analog I/Os for high speed SerDes (28Gbps to 112Gbps) circuits created in advanced BiCMOS, SOI and FinFET nodes.

  September 16, 2021