Category: Silicon controlled rectifier

• DTSCR dual diode ESD protection ESD protection approaches FinFET Local clamp SCR Silicon controlled rectifier SOI

  ESD basic: Silicon Control Rectifier (SCR)

  

  SCR intro: Silicon-controlled rectifiers (SCRs) are interesting devices that can be used for on-chip ESD protection, if (and only if) they are properly designed and biased. SCRs are used for high-speed/RF or low-capacitance, small area/high-performance ESD solutions in all CMOS technologies, including SOI and FinFET (down to 3nm today). SCR…

  February 10, 2023
• CMOS DTSCR ESD devices ESD protection FinFET Local clamp Low capacitance ESD Optical communication Paper SCR SerDES SiGe BiCMOS Silicon controlled rectifier SOI TakeCharge Wired communication

  Optimized Local I/O ESD Protection for SerDes In Advanced SOI, BiCMOS and FinFET Technology

  Sofics’ 2021 IEDS publication. Semiconductor companies are developing ever faster interfaces to satisfy the need for higher data throughputs. However, the parasitic capacitance of the traditional ESD solutions limits the signal frequency. This paper demonstrates low-cap Analog I/Os for high speed SerDes (28Gbps to 112Gbps) circuits created in advanced BiCMOS,…

  August 9, 2022
• 2.5D and 3D hybrid integration 3D integration CMOS ESD design window ESD protection High voltage tolerance Imagers Local clamp Low capacitance ESD Silicon controlled rectifier Wired communication

  Selecting optimized ESD protection for CMOS image sensors

  Today, you can find CMOS image sensors almost everywhere in consumer, automotive, health and security applications. There has been a lot of innovation to enable demanding requirements. The article provides a summary about the 3 main aspects that IC designers need to consider when selecting the ESD protection clamps for…

  June 1, 2022
• ESD devices ESD protection ESD protection approaches FinFET Local clamp SCR SerDES Silicon controlled rectifier

  Optimized ESD protection based on Silicon Controlled Rectifiers (SCR), verified on Samsung Foundry 4nm and 8nm FinFET processes

  Engineers developing semiconductor devices in the most advanced FinFET technology need improved ESD protection solutions. We demonstrate ESD protection solutions based on proprietary Silicon Controlled Rectifiers verified on the Samsung Foundry 8nm and 4nm FinFET process.

  February 15, 2022
• 2.5D and 3D hybrid integration ESD protection ESD protection approaches FinFET SerDES Silicon controlled rectifier

  Optimized Local I/O ESD Protection in FinFET Technology for 2.5D and 3D hybrid integration

  Semiconductor companies using 2.5D and 3D hybrid integration need to consider Electrostatic Discharge (ESD) protection early in the design, even for die-2-die interfaces that remain inside the package. There are several challenges but also opportunities. The use of a local ESD protection clamp at the TSV offers more robustness, higher…

  January 10, 2022
• ESD devices ESD protection Low leakage Silicon controlled rectifier SOI Wireless

  Optimized IP for GF’s 22nm FDX technology

  The 22nm FDX process from GlobalFoundries is a great technology for various applications including low-power IoT on the edge, high-bandwidth 5G mmWave devices and automotive products, Since its market introduction, the SOI process technology receives a lot of attention because it combines unique features in one platform. At the 2021…

  September 23, 2021
• ESD devices ESD protection ESD protection approaches FinFET Local clamp Low capacitance ESD SerDES Silicon controlled rectifier SOI

  Optimized Local I/O ESD Protection for SerDes In Advanced SOI, BiCMOS and FinFET Technology

  Semiconductor companies are developing ever faster interfaces to satisfy the need for higher data throughputs. However, the parasitic capacitance of the traditional ESD solutions limits the signal frequency. This paper demonstrates low-cap Analog I/Os for high speed SerDes (28Gbps to 112Gbps) circuits created in advanced BiCMOS, SOI and FinFET nodes.

  September 16, 2021